AFT09MS031NR1 AFT09MS031GNR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS ? 870 MHz
P
out
, OUTPUT POWER (WATTS)
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. CW Output Power versus Gate--Source Voltage
25
0.5 1 1.5 2 2.5 3 4
20
5
15
10
30
P
out
, OUTPUT POWER (WATTS)
4.5
Pin, INPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
15
16
15.5
0.01 20.1
1
ηD
Gps
30
50
40
10
20
17.5
17
16.5
18
60
70
80
η
D
, DRAIN EFFICIENCY (%)
Pout
VDD
= 13.6 Vdc, IDQ
= 500 mA
f = 870 MHz
VDD
= 12.5 Vdc
Pin
=0.3W
18.5
19
0
Figure 8. Power Gain, CW Output Power and
Drain Efficiency versus Input Power
VDD
= 13.6 Vdc, Pin
=0.3W
VDD
= 12.5 Vdc, Pin
=0.6W
VDD
= 13.6 Vdc, Pin
=0.6W
35
40
45
f = 870 MHz
VDD
= 13.6 Vdc, IDQ
= 500 mA, Pout
=31WAvg.
f
MHz
Zsource
?
Zload
?
870
0.28 -- j0.71
0.98 -- j0.52
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 9. Narrowband Series Equivalent Source and Load Impedance ? 870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
50
?
50
?